當(dāng)前位置：上海巨納科技有限公司>>二維材料>>二維材料薄膜>>基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硫化鉬

基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硫化鉬

返回列表頁

參考價

面議

具體成交價以合同協(xié)議為準(zhǔn)

產(chǎn)品型號

品牌

廠商性質(zhì)其他

所在地上海

在線詢價收藏產(chǎn)品查看聯(lián)系電話

聯(lián)系方式：袁文軍查看聯(lián)系方式

更新時間：2024-02-15 14:57:49瀏覽次數(shù)：104次

聯(lián)系我時，請告知來自環(huán)保在線

產(chǎn)品分類 品牌分類

  二維材料

二維材料粉末

二維材料溶液

碲化物晶體

硒化物晶體

硫化物晶體

絕緣體

鈣鈦礦

異質(zhì)結(jié)

MOFS材料

二維材料薄膜

黑磷

六方氮化硼

其他二維材料

全部產(chǎn)品列表

暫無信息

上海巨納科技有限公司

經(jīng)營模式：其他

商鋪產(chǎn)品：574條

所在地區(qū)：

聯(lián)系人：袁文軍

詢價 給他留言

產(chǎn)品簡介

簡要描述：Full Area Coverage Monolayer MoS2 on c-cut Sapphire

詳細(xì)介紹

Full Area Coverage Monolayer MoS2 on c-cut Sapphire

This product contains full area coverage MoS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	(0001) c-cut sapphire
Coverage	Full Coverage Monolayer
Electrical properties	1.85 eV Direct Bandgap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, photoluminescence, TEM, EDS

Specifications

1) Full coverage 99% monolayer MoS2 uniformly covered across c-cut sapphire.

2) . One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Atomically smooth surface with roughness < 0.15 nm.

4) Highly uniform surface morphology. MoS2 monolayers uniformly cover across the sample.

5) 99.9995% purity as determined by nano-SIMS measurements

6) Repeatable Raman and photoluminescence response

7) High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) c-cut Sapphire but our research and development team can transfer MoS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9) MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using -bombardment technique.

Supporting datasets [for 99% Full area coverage on c-cut Sapphire]

Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on c-cut sapphire confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer MoS2 on c-cut sapphire confirming Mo:S 1:2 ratios

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.