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目錄:北京海富達(dá)科技有限公司>>儀器儀表>> JKY/R-1550反射半導(dǎo)體光放大器Semiconductor Optical Amplifier （SOA） Hig
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吳經(jīng)理
1.55µm 波長(zhǎng)
高小信號(hào)增益 （>25dB）
低前端反射率 （<10-5）
低增益紋波 （~ 1dB）
Features
· 1.55μm operation
· High small signal gain to 70C （>25dB）
· Low front facet reflectivity （<10-5）
· High polarisation selectivity （ 20dB）
· 1.2GHz electrical bandwidth
· InP Buried Heterostructure design
· TEC cooled
· SMA style 7 pin package
· Available as packaged or chip-on-carrier
· APC connectors provided
SOA-R-OEC-1550
Application Examples
· External cavity laser gain block
· Reflective amplifier
· Reflective modulator
· Uncooled WDM-PON transmitter
Description
The reflective SOA is a polarisation dependent gain block
with an ultra-low front facet reflectivity （<10-5）. It is ideal as a gain block for external cavity lasers or other reflective
device technologies such as uncooled transmitters in Passive Optical Networks （PONs）
The SOA-R-OEC-1550 utilises CIPs proprietary InP buried heterostructure design and is available in either a 7-pin
butterfly/SMA package with a thermistor, thermo-electric cooler and single mode fibre pigtails or as a custom chipon-
carrier product. It is generally intended for use with the Angled Polished Connectors （APC） provided. The device
is supplied with a 50O input impedance to the SMA port and has a direct modulation bandwidth of 1.2GHz.
Although The SOA-R-OEC-1550 is designed to operate uncooled, the 7 pin module is provided with an integrated TEC
to allow devices to be assessed at elevated temperatures by using the TEC as a heater. This allows the unit to be
used as a lab demo unit for uncooled WDM-PON
Optical and electrical specifications
Item Test condition Min. Typ. Max. Unit
Integrated ASE Power I = 50mA T= 20C 8 mW
Small Signal Gain （20C） I = 50mA T= 20C 30 dB
Small Signal Gain （70C） I=80mA T= 70C 25 dB
Saturated Output Power （PSAT） （20C） I = 50mA T= 20C 5 dBm
Saturated Output Power （PSAT） （70C） I=80mA T= 70C 2 dBm
Gain Peak Wavelength I = 50mA T= 20C 1530 1570 nm
Polarisation Dependent Gain （PDG） I = 50mA T= 20C 20 dB
Electrical Bandwidth （BW） I = 50mA PIN = -10dBm T= 20C 1.2 GHz
Electrical Input impedance 50 O
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